95631 datasheet 2n3904

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The 2N3904 comes in a TO-92 case with leads in the order C,B,E. Some equivalent transistors have the opposite pinout (E,B,C) and some are B,C,E. This won't be a problem so long as you are aware of the difference, and refer to the datasheet of the part you are using when wiring up the circuit. 2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C
 

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2N3904 datasheet, 2N3904 datasheets, 2N3904 pdf, 2N3904 circuit : TRSYS - NPN SIMALL SIGNAL TRANSISTOR ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. 2N3904 General Purpose Transistors NPN TO-92 Page 1 12/05/08 V1.1 High Speed Switching Features: • NPN silicon planar switching transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. 2N3904 General Purpose Transistors NPN TO-92 Page 1 12/05/08 V1.1 High Speed Switching Features: • NPN silicon planar switching transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. 1996. 1. 28 1/3 semiconductor technical data kn3904 epitaxial planar npn transistor revision no : 0 general purpose application. switching application. 2N3904 General Purpose Transistors NPN TO-92 Page 1 12/05/08 V1.1 High Speed Switching Features: • NPN silicon planar switching transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1
 

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2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C 2N2222 datasheet, 2N2222 pdf, 2N2222 data sheet, datasheet, data sheet, pdf 2N3904 datasheet, 2N3904 datasheets, 2N3904 pdf, 2N3904 circuit : ONSEMI - General Purpose Transistors(NPN Silicon) ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. 2N3904 / MMBT3904 / PZT3904 2N3904 MMBT3904 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted

NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted Since the 2N3904 is an NPN transistor, that means the base needs positive biasing (appropriate voltage levels and resistance) to turn on the collector emitter junction for proper current flow. Use of a load resistor (R1 above) is also important so there is not too much current being driven through the LED and transistor.

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